Moduł oferowany także w ramach programów studiów:
Informacje ogólne:
Nazwa:
Electronic Devices
Tok studiów:
2017/2018
Kod:
IES-1-206-s
Wydział:
Informatyki, Elektroniki i Telekomunikacji
Poziom studiów:
Studia I stopnia
Specjalność:
-
Kierunek:
Electronics and Telecommunications
Semestr:
2
Profil kształcenia:
Ogólnoakademicki (A)
Język wykładowy:
Angielski
Forma i tryb studiów:
Stacjonarne
Osoba odpowiedzialna:
Dziurdzia Piotr (dziurdzi@agh.edu.pl)
Osoby prowadzące:
Dziurdzia Piotr (dziurdzi@agh.edu.pl)
Krótka charakterystyka modułu

The course on Electronic Devices provides basics of electronic components operation, such as resistors, capacitors and inductances, diodes, BJTs, JFETs, MOSFETs, and other semiconductor devices.

Opis efektów kształcenia dla modułu zajęć
Kod EKM Student, który zaliczył moduł zajęć wie/umie/potrafi Powiązania z EKK Sposób weryfikacji efektów kształcenia (forma zaliczeń)
Wiedza
M_W001 An ability to utilize semicondcutor models to analyze carrier densities, carrier transport and recombination. ES1A_W01, ES1A_W02 Egzamin
M_W002 An ability to understand and utilize the basic governing equations to analyze semiconductor devices. ES1A_W07, ES1A_W12 Egzamin
M_W003 Knowledge and understanding account for functionality and design of discrete semiconductor devices ES1A_W09 Egzamin
M_W004 Knowledge and understanding account for basic parameters determining gain and high frequency properities of semiconductor devices. ES1A_W05 Egzamin
Umiejętności
M_U001 Student can compile reports about semiconductor devices and to present the material orally and in writing in English. Student will be able to communicate and interact constructively with a person skilled in the art. ES1A_U01 Kolokwium
M_U002 Student has skills and ablities in conducuting experimental characterization of semiconductor devices. ES1A_U08 Kolokwium
M_U003 Student can formulate models of semiconductor devices and elemental circuits with using these models and carry out basic calculations of electrical parameters ES1A_U09 Kolokwium
M_U004 Student umie analizować i projektować układy pomiarowe parametrów podstawowych przyrządów półprzewodnikowych oraz przeprowadzać pomiary i opracowywać wyniki ES1A_U12 Kolokwium
Kompetencje społeczne
M_K001 Student understands the need and knows the possibilities of continuous traing, raising the competence of professional, personal and social skills. ES1A_K01 Aktywność na zajęciach
M_K002 Student is conscious of importance and understands the nontechnical aspects and implications of the engineering activities, including its impact on the enviroment, knows the responsibility of taken decisions. ES1A_K02 Aktywność na zajęciach
M_K003 Student is aware of the behaviours ina professional maner, compliances with the rules of proffesional ethics and respects for the diversity of views and cultures. ES1A_K03 Aktywność na zajęciach
Matryca efektów kształcenia w odniesieniu do form zajęć
Kod EKM Student, który zaliczył moduł zajęć wie/umie/potrafi Forma zajęć
Wykład
Ćwicz. aud
Ćwicz. lab
Ćw. proj.
Konw.
Zaj. sem.
Zaj. prakt
Zaj. terenowe
Zaj. warsztatowe
Inne
E-learning
Wiedza
M_W001 An ability to utilize semicondcutor models to analyze carrier densities, carrier transport and recombination. + - - - - - - - - - -
M_W002 An ability to understand and utilize the basic governing equations to analyze semiconductor devices. + - - - - - - - - - -
M_W003 Knowledge and understanding account for functionality and design of discrete semiconductor devices + - + - - - - - - - -
M_W004 Knowledge and understanding account for basic parameters determining gain and high frequency properities of semiconductor devices. + - - - - - - - - - -
Umiejętności
M_U001 Student can compile reports about semiconductor devices and to present the material orally and in writing in English. Student will be able to communicate and interact constructively with a person skilled in the art. - - + - - - - - - - -
M_U002 Student has skills and ablities in conducuting experimental characterization of semiconductor devices. + - + - - - - - - - -
M_U003 Student can formulate models of semiconductor devices and elemental circuits with using these models and carry out basic calculations of electrical parameters + - + - - - - - - - -
M_U004 Student umie analizować i projektować układy pomiarowe parametrów podstawowych przyrządów półprzewodnikowych oraz przeprowadzać pomiary i opracowywać wyniki - - + - - - - - - - -
Kompetencje społeczne
M_K001 Student understands the need and knows the possibilities of continuous traing, raising the competence of professional, personal and social skills. + - + - - - - - - - -
M_K002 Student is conscious of importance and understands the nontechnical aspects and implications of the engineering activities, including its impact on the enviroment, knows the responsibility of taken decisions. + - + - - - - - - - -
M_K003 Student is aware of the behaviours ina professional maner, compliances with the rules of proffesional ethics and respects for the diversity of views and cultures. + - + - - - - - - - -
Treść modułu zajęć (program wykładów i pozostałych zajęć)
Wykład:

Lectures:

Introduction to Electronic Devices. Passive elements, RC circuits, voltage and current sources.

Semiconductor materials, crystal structures, basic of quantum theory and band theory. Charge carriers’ properties.

Introduction to p-n junction theory: electrostatics; ideal p-n diode equation. Non-ideal diode description. DC voltage-current characteristics, temperature effects. Reverse bias transition capacitance.

Charge storage and transient behaviour. Real diode small- and large- signal models. Junction breakdown; Zener, tunnel and other special types of diodes.

Theory of Junction Field Effect Transistor (JFET); dc characteristics and ac preformance.

Bipolar Junction Transistors (BJT); derivation of voltage-current and current gain expressions. Dc and ac models and equivalent circuits. Frequency response. BJT as a switch, breakdown voltages. High power BJTs; cases and thermal resistance.

Metal-semiconductor junctions: Schottky diodes, nonrectifying contacts, tunneling. Two-terminal MOS structure, MOS capacitors, flatband and threshold voltages.

Static MOS transistor (MOSFET), its equivalent circuit, body effect. Small signal parameters, equivalent circuit and frequency limitations of MOSFETs. State-of-the-Art MOS technology (CMOSFET).

P-n-p-n structures: thyristors and triacs. UJT and PUT transistors. Peltier modules.

Fundamental processes in semiconductor device technology: rafination, monocrystallization, epitaxy, oxidation, photolitography, dopant diffusion and implantation.

Ćwiczenia laboratoryjne:

Lab exercises

Intriduction
RC circuits
Diodes – characteristics
Diodes – applications in elelctronic circuits
JFET transistor
BJT transistor – characteristics
BJT transistor – small-signal parameters
Current sources
Switching of diodes and transistors
MOS transistors

Nakład pracy studenta (bilans punktów ECTS)
Forma aktywności studenta Obciążenie studenta
Sumaryczne obciążenie pracą studenta 126 godz
Punkty ECTS za moduł 5 ECTS
Udział w wykładach 28 godz
Samodzielne studiowanie tematyki zajęć 20 godz
Udział w ćwiczeniach laboratoryjnych 28 godz
Przygotowanie sprawozdania, pracy pisemnej, prezentacji, itp. 20 godz
Przygotowanie do zajęć 30 godz
Pozostałe informacje
Sposób obliczania oceny końcowej:

The positive score for the course is based on positive scores from the laboratory and the exams.
The final score is calculated based on the weighted average of the marks from the laboratory (40%) and the exam (60%).
If student got a positive score from the laboratory and passed the exam in the first term, and she or he was additionally active during the lectures and laboratories, then the final grade is raised by 0.5 point.

Wymagania wstępne i dodatkowe:

· Familiarity with the solid state physics
· Knowledge of the electric circuits analysis

Zalecana literatura i pomoce naukowe:

1. Yang E.S. – Microelectronic devices – McGraw Hill 1988
2. Sedra A.S, Smith K.C. – Microelectronic Circuits – Oxfor University Press 1998
3. Neamen D.A. – Semiconductor Physic and Devices 3rd ed. – Mc Graw Hill 2002
4. Sze S.M. – Semiconductor Devices: physics and technology, 2nd Edition – Wiley 2002
5. Razavi B. – Fundamentals of Microelectrinics, Wiley 2008

Publikacje naukowe osób prowadzących zajęcia związane z tematyką modułu:

Dziurdzia P., Mirocha A. : „From Constant to Temperature Dependent Parameters Based Electrothermal Models of TEG”, Proc. of the 16-th International Conference Mixed Design of Integrated Circuits and Systems, Łódź, Poland, 25-27 June 2009, pp. 555-559.

Kos A., Boroń K., Bratek P., Brzozowski I., Dziurdzia P., Frankiewicz M., Gelmuda W., Gołda A., „Systemy scalone CMOS – wydajność i energia”, Jedenasta krajowa konferencja elektroniki : Darłowo, 11–14.06.2012.

Dziurdzia P., Bratek P., Brzozowski I., Gelmuda W., Ostrowski J., Kos A., „Extraction of temperature dependent parameters for an electrothermal model of thermoelectric energy harvester”, Proc. of the Mixed Design of Integrated Circuits and Systems Conference MIXDES 2016, Łódź, Poland, June 23–25, 2016, pp. 1-5.

Dziurdzia P., Brzozowski I., Bratek P., Gelmuda W., Kos A., „Estimation and harvesting of human heat power for wearable electronic devices”, IOP Conference Series: Materials Science and Engineering, ISSN 1757-8981, 2016 vol. 104, art. no. 012005, pp. 1–8.

Informacje dodatkowe:

Part of the laboratory exercises is realised according to a project method.