Module also offered within study programmes:
General information:
Name:
Electronic Devices
Course of study:
2017/2018
Code:
IES-1-206-s
Faculty of:
Computer Science, Electronics and Telecommunications
Study level:
First-cycle studies
Specialty:
-
Field of study:
Electronics and Telecommunications
Semester:
2
Profile of education:
Academic (A)
Lecture language:
English
Form and type of study:
Full-time studies
Responsible teacher:
Dziurdzia Piotr (dziurdzi@agh.edu.pl)
Academic teachers:
Dziurdzia Piotr (dziurdzi@agh.edu.pl)
Module summary

The course on Electronic Devices provides basics of electronic components operation, such as resistors, capacitors and inductances, diodes, BJTs, JFETs, MOSFETs, and other semiconductor devices.

Description of learning outcomes for module
MLO code Student after module completion has the knowledge/ knows how to/is able to Connections with FLO Method of learning outcomes verification (form of completion)
Social competence
M_K001 Student understands the need and knows the possibilities of continuous traing, raising the competence of professional, personal and social skills. ES1A_K01 Activity during classes
M_K002 Student is conscious of importance and understands the nontechnical aspects and implications of the engineering activities, including its impact on the enviroment, knows the responsibility of taken decisions. ES1A_K02 Activity during classes
M_K003 Student is aware of the behaviours ina professional maner, compliances with the rules of proffesional ethics and respects for the diversity of views and cultures. ES1A_K03 Activity during classes
Skills
M_U001 Student can compile reports about semiconductor devices and to present the material orally and in writing in English. Student will be able to communicate and interact constructively with a person skilled in the art. ES1A_U01 Test
M_U002 Student has skills and ablities in conducuting experimental characterization of semiconductor devices. ES1A_U08 Test
M_U003 Student can formulate models of semiconductor devices and elemental circuits with using these models and carry out basic calculations of electrical parameters ES1A_U09 Test
M_U004 Student umie analizować i projektować układy pomiarowe parametrów podstawowych przyrządów półprzewodnikowych oraz przeprowadzać pomiary i opracowywać wyniki ES1A_U12 Test
Knowledge
M_W001 An ability to utilize semicondcutor models to analyze carrier densities, carrier transport and recombination. ES1A_W01, ES1A_W02 Examination
M_W002 An ability to understand and utilize the basic governing equations to analyze semiconductor devices. ES1A_W07, ES1A_W12 Examination
M_W003 Knowledge and understanding account for functionality and design of discrete semiconductor devices ES1A_W09 Examination
M_W004 Knowledge and understanding account for basic parameters determining gain and high frequency properities of semiconductor devices. ES1A_W05 Examination
FLO matrix in relation to forms of classes
MLO code Student after module completion has the knowledge/ knows how to/is able to Form of classes
Lecture
Audit. classes
Lab. classes
Project classes
Conv. seminar
Seminar classes
Pract. classes
Zaj. terenowe
Zaj. warsztatowe
Others
E-learning
Social competence
M_K001 Student understands the need and knows the possibilities of continuous traing, raising the competence of professional, personal and social skills. + - + - - - - - - - -
M_K002 Student is conscious of importance and understands the nontechnical aspects and implications of the engineering activities, including its impact on the enviroment, knows the responsibility of taken decisions. + - + - - - - - - - -
M_K003 Student is aware of the behaviours ina professional maner, compliances with the rules of proffesional ethics and respects for the diversity of views and cultures. + - + - - - - - - - -
Skills
M_U001 Student can compile reports about semiconductor devices and to present the material orally and in writing in English. Student will be able to communicate and interact constructively with a person skilled in the art. - - + - - - - - - - -
M_U002 Student has skills and ablities in conducuting experimental characterization of semiconductor devices. + - + - - - - - - - -
M_U003 Student can formulate models of semiconductor devices and elemental circuits with using these models and carry out basic calculations of electrical parameters + - + - - - - - - - -
M_U004 Student umie analizować i projektować układy pomiarowe parametrów podstawowych przyrządów półprzewodnikowych oraz przeprowadzać pomiary i opracowywać wyniki - - + - - - - - - - -
Knowledge
M_W001 An ability to utilize semicondcutor models to analyze carrier densities, carrier transport and recombination. + - - - - - - - - - -
M_W002 An ability to understand and utilize the basic governing equations to analyze semiconductor devices. + - - - - - - - - - -
M_W003 Knowledge and understanding account for functionality and design of discrete semiconductor devices + - + - - - - - - - -
M_W004 Knowledge and understanding account for basic parameters determining gain and high frequency properities of semiconductor devices. + - - - - - - - - - -
Module content
Lectures:

Zajęcia w ramach modułu prowadzone są w postaci wykładu (30 godzin) oraz ćwiczeń laboratoryjnych (30 godzin).

Lecture (15 weeks)

Semiconductor Devices

1st week: Semiconductor materials, crystal structures, basic of quantum theory and band theory.
Charge carriers’ properties, state and carrier distributions, equlibrium carrier concentration.
2nd week: Drift, diffusion, generation-recombination. Equations of state, minority carrier diffusion equation.
3rdweek: Fundamental processes in semiconductor device technology: rafination, monocrystallization, epitaxy, oxidation, photolitography, dopant diffusion and implantation.
4th week: Introduction to p-n junction theory: electrostatics; ideal p-n diode equation. Non-ideal diode description. DC voltage-current characteristics, temperature effects. Reverse bias transition capacitance.
5th week: Charge storage and transient behaviour. Real diode small- and large- signal models. Junction breakdown; Zener, tunnel and other special types of diodes.
6th week: Bipolar Junction Transistors (BJT); derivation of voltage-current and current gain expressions. Dc and ac models and equivalent circuits. Frequency response.
7th week: BJT as a switch, breakdown voltages. High power BJTs; cases and thermal resistance.
8th week: P-n-p-n structures: thyristors and triacs. UJT and PUT transistors.
9th week: Theory of Junction Field Effect Transistor (JFET); dc characteristics and ac preformance.
10th week: Metal-semiconductor junctions: Schottky diodes, nonrectifying contacts, tunneling.
11th week: MESFET’s junction structure on the GaAs and its frequency and power limitations. Enhancement MESFETs.
12th week: Two-terminal MOS structure, MOS capacitors, flatband and threshold voltages.
13th week: Static MOS transistor (MOSFET), its equivalent circuit, body effect.
14th week: Small signal parameters, equivalent circuit and frequency limitations of MOSFETs.
15th week: State-of-the-Art MOS technology (CMOSFET): small-geometry effects, mobility degradation and velocity saturation. MNOS memory cells.

Laboratory classes:

Lab exercises

DC characteristics of p+-n diodes
Small-signal diode parameters
Capacitance of the p­-n junction.
Switching of p-n diodes
Zener and tunnel diodes
Thermal parameters of p-n diodes
Thyritors and triacs
DC characteristics of bipolar junction transistors (BJT)
Small-signal parameters of BJT
Common emitter amplifier
Switching of BJT’s
Thermal resistance of BJT’s and power MOSFETs
Field effect junction transistors (JFET’s)
Metal-oxide-semiconductor field effect transiststors (MOSFET’s)

Student workload (ECTS credits balance)
Student activity form Student workload
Summary student workload 126 h
Module ECTS credits 5 ECTS
Participation in lectures 28 h
Realization of independently performed tasks 20 h
Participation in laboratory classes 28 h
Preparation of a report, presentation, written work, etc. 20 h
Preparation for classes 30 h
Additional information
Method of calculating the final grade:

1. Warunkiem uzyskania pozytywnej oceny końcowej jest uzyskanie pozytywnej oceny z laboratorium oraz kolokwium zaliczeniowego z wykładu.
2. Obliczamy średnią ważoną z ocen z laboratorium (75%) i wykładów (25%) uzyskanych we wszystkich terminach.
3. Wyznaczmy ocenę końcową na podstawie zależności:
if sr>4.75 then OK:=5.0 else
if sr>4.25 then OK:=4.5 else
if sr>3.75 then OK:=4.0 else
if sr>3.25 then OK:=3.5 else OK:=3
4. Jeżeli pozytywną ocenę z laboratorium i zaliczenia wykładu uzyskano w pierwszym terminie i dodatkowo student był aktywny na wykładach, to ocena końcowa jest podnoszona o 0.5.

Prerequisites and additional requirements:

· Familiarity with calculus, ordinary differential equations
· Familiarity with the solid state physics
· Knowledge of electrostatic fields: its definiton, source and computation of its strenght with known charge distribution
· Knowledge of the electric circuit analysis

Recommended literature and teaching resources:

1. Yang E.S. – Microelectronic devices – McGraw Hill 1988
2. Sedra A.S, Smith K.C. – Microelectronic Circuits – Oxfor University Press 1998
3. Neamen D.A. – Semiconductor Physic and Devices 3rd ed. – Mc Graw Hill 2002
4. Sze S.M. – Semiconductor Devices: physics and technology, 2nd Edition – Wiley 2002
5. Razavi B. – Fundamentals of Microelectrinics, Wiley 2008

Scientific publications of module course instructors related to the topic of the module:

Dziurdzia P., Mirocha A. : „From Constant to Temperature Dependent Parameters Based Electrothermal Models of TEG”, Proc. of the 16-th International Conference Mixed Design of Integrated Circuits and Systems, Łódź, Poland, 25-27 June 2009, pp. 555-559.

Kos A., Boroń K., Bratek P., Brzozowski I., Dziurdzia P., Frankiewicz M., Gelmuda W., Gołda A., „Systemy scalone CMOS – wydajność i energia”, Jedenasta krajowa konferencja elektroniki : Darłowo, 11–14.06.2012.

Dziurdzia P., Bratek P., Brzozowski I., Gelmuda W., Ostrowski J., Kos A., „Extraction of temperature dependent parameters for an electrothermal model of thermoelectric energy harvester”, Proc. of the Mixed Design of Integrated Circuits and Systems Conference MIXDES 2016, Łódź, Poland, June 23–25, 2016, pp. 1-5.

Dziurdzia P., Brzozowski I., Bratek P., Gelmuda W., Kos A., „Estimation and harvesting of human heat power for wearable electronic devices”, IOP Conference Series: Materials Science and Engineering, ISSN 1757-8981, 2016 vol. 104, art. no. 012005, pp. 1–8.

Additional information:

Part of the laboratory exercises is realised according to a project method.